n-c hannel logic level e nhancement mode f ield e ffect t rans is tor to-252 and to-251 package. abs olute maximum r atings (ta=25 c unless otherwise noted) s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ) 40v 53a @ v gs =10v 10 @ v gs =4.5v features superhighdensecelldesignforlowr ds (on ). r ugged and reliable. s g d stu series to-252a a(d-pak) std series to-251(l-pak) g g s s d d typ s tu/d426s oct,2007 8 3 50 40 20 53 20 -55 to 175 50 a 100 parameter symbol unit drain-s ource voltage v ds v g ate-s ource voltage v gs v drain c urrent-c ontinuous t a = -p ulsed i d a a a i dm drain-s ource diode forward current i s 25 c thermal characteristics thermal r esistance, junction-to-case thermal r esistance, junction-to-ambient r jc r ja /w c /w c w maximum p ower dis s ipation p d o perating j unction and s torage temperature r ange t j ,t stg c ta= 25 c limit avalanche current avalanche energy c c i as e as a mj 20 100 @ @ ver1.1
parameter symbol c ondition min typ max unit off characteristics drain-s ource b reakdown voltage bv ds s = v gs 0v, i d 250ua = 40 v c 5 e le ctr ical char acte r is tics (t c =25 c unles s otherwis e noted) s tu/d426s zero g ate voltage drain c urrent i ds s v ds 32v, v gs 0v 1 gate-body leakage i gss v gs 20v, v ds 0v = = 100 na on char acte r is tics a g a te t hre s hold v olta ge v gs(th) v ds v gs ,i d = 250ua = 13 v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs 10v, i d 10a v gs 4.5v, i d 5a o n-s ta te d ra in c urre nt i d(on) v ds =10v,v gs = 10v a s f orward trans conductance fs g v ds 10v, i d 10a dynamic char acte r is tics b input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =15v, v gs =0v f =1.0mh z p f p f p f s witc hing c har ac te r is tic s b turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd = 15v i d =1a v gs =10v r gen =6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v, i d =10a v gs =10v nc nc nc fall time = = = = == 2 ua mohm mohm v ds =15v, i d =10a,v gs =10v nc v ds =15v, i d =10a,v gs =4.5v 30 150 280 1600 32 16 45 21 20 7.3 3.5 15 26 ohm rg gate resistance v gs =0v, v ds = 0v, f=1.0mh z 0.3 1.6 8 10 = = 10 12 drain-s ource b reakdown voltage bv ds s = v gs 0v, i d 10ma = 45 v d
parameter symbol c ondition min typ max unit electrical characteristics (t c =25 c unles s otherwis e noted) drain-source diode characteristics diode forward voltage v sd v gs = 0v, is = 20a 1.3 v a notes b.g uaranteed by des ign, not s ubject to production tes ting. a.pulse test:pulse width 300us, duty cycle 2%. figure 2. transfer characteristics f igure 4. o n-r e s is ta nc e va ria tion with drain c urrent and temperature i d , drain c urrent (a) v gs , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-resistance i d , drain c urrent (a) 3 r ds (on) , normalized 12 9 6 3 1 20 15 10 5 0 0 tj=1 25 c 0.95 tj( c) t j, j unction t emperature ( c ) f igure 1. output c haracteris tics v ds ,drain-to-sourcevoltage(v) i d , drain current(a) 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 v gs =3v v gs =4 v v gs =4 .5v v gs = 10v f igure 3. on-r es is tance vs . drain c urrent and gate voltage 12 24 36 48 60 1 v gs =10v v gs =4.5v v gs =2.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 25 50 125 100 75 v gs =10v i d =10a v gs =4.5v i d =5a 150 60 15 s tu/d426s 3.2 4.0 2.4 1.6 0.8 4.8 -55 c 25 c c. s i n t r a t g t j = 2 5 l = 0 . 5 m h, r g = 25 , i as 20 = a, ( ) se e f ig u re 15 v dd < - v ( ) br d s s c, d. p uls e tes t:p uls e w idth 1us , duty c ycle 1 % . < - < -
f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hreshold v oltage bv ds s , normalized drain-s ource b reakdown v oltage is, s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent v sd ,bodydiodeforwardvoltage(v) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 4 6 20.0 10.0 1.0 0 1.2 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua v gs ,gate-sourcevoltage(v) r ds (on) ( m ) 30 25 20 15 10 5 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 24 68 10 0 f igure 5. g ate t hreshold v ariation with t emperature 25 c 125 c 25 c 75 c 125 c i d =9a 75 c s tu/d426s 0.96 0.72 0.48 0.24 5.0
6 f igure 12. maximum s afe operating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) 100 10 0.5 0.1 1 1103060 v gs =10v s ingle p uls e tc=25 c r ds (on) limit dc 1s 100 m s 1 0 ms 1 m s v gs , g ate to s ource v oltage (v ) f igure 10. g ate c harge qg, total gate charge (nc) 10 8 6 4 2 0 0510 15 20 25 30 35 40 v ds =15v i d =10a figure 9. capacitance v ds , drain-to s ource voltage (v ) c, capacitance (pf) 0 5 10 15 20 25 30 2400 2000 1600 1200 800 400 0 ciss coss crss f igure 11.s witching characteris tics rg,gateresistance( ) s witching t ime (ns ) 100 10 1 1 610 60100 60 600 300 220 t d(off) tf vds =15v,id=1a vgs =10v 5 600 td(on) tr s tu/d426s
f igure 13. s witching t es t c ircuit f igure 14. s witching waveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width 6 inve r te d v dd r d v v r s v g gs in gen out l 6 t rans ient t hermal impedance s quare wave p ulse duration (sec) f igure 16. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse s tu/d426s t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd drive r a 15v 20v f igure 15a. figure 15b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve
7 s tu/d426s to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
8 s tu/d426s to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
to251 tube/to-252 to-252 carrier tape to-252 reel tape and reel data unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2 p0 p1 p2 t 6.80 2 0.1 10.3 2 0.1 2.50 2 0.1 ? 2 ? 1.5 + 0.1 -0 16.0 0.3 2 1.75 0.1 2 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 s 9 "a" to-251 tube s tu/d426s
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